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ARCHIVE INFORMATION
MRF6S18140HR3 MRF6S18140HSR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2006
?
Initial Release of Data Sheet
1
Dec. 2008
?
Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
?
Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
?
Corrected VDS
to V
DD
in the RF test condition voltage callout for V
GS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
?
Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic
range, p. 6
?
Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
1.1
Dec. 2009
?
Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change
Notification number, PCN13232, p. 1, 2
?
Data sheet archived. Part no longer manufactured.
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相关PDF资料
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